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Gettering Defects in Semiconductors (Springer Series in Advanced Microelectronics) (Springer Series in Advanced Microelectronics) by V.A. Perevostchikov

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Published by Springer .
Written in English

Subjects:

  • Chemistry,
  • Mathematics and Science,
  • Semi-conductors & super-conductors,
  • Science/Mathematics,
  • Electronics - Semiconductors,
  • Technology,
  • Technology & Industrial Arts,
  • Engineering - Chemical & Biochemical,
  • Optics,
  • Gettering Defects,
  • Gettering Techniques,
  • Microelectronic Technologies,
  • Technology / Optics,
  • Chemistry - General,
  • Getters,
  • Materials,
  • Matâeriaux,
  • Semiconducteurs,
  • Semiconductors

Book details:

Edition Notes

ContributionsVictor Gloumov (Translator)
The Physical Object
FormatHardcover
Number of Pages388
ID Numbers
Open LibraryOL9055664M
ISBN 10354026244X
ISBN 109783540262442

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The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are . Gettering Defects in Semiconductors fulfills three basic purposes: – to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; – to identify new directions in research, particularly to enhance the perspective of professionals and.   Gettering Defects in Semiconductors fulfills three basic purposes: – to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; – to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists; – to fill a gap in the contemporary literature on . 1. Basic technological processes and defect formation in the components of device structures The effects of defects on electrophysical and functional parameters of semiconducting structures and devices Techniques for high-temperature gettering Physical foundations for low-temperature gettering techniques --Conclusions. Series Title.

Ever since the invention of the transistor, a fantastic and continual growth in silicon technology has been witnessed; leading to yet more complex functions and higher densities of devices. The current book summarises the key issues of this other topics, the outlook for silicon wafer technology and silicon materials engineering in the next millennium is reviewed and new approaches. Gettering Defects in Semiconductors fulfills three basic purposes: - to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; -- to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists; -- to fill a gap in the contemporary literature on the. Books: Title Gettering defects in semiconductors: Author(s) Perevostchikov, VA; Skoupov, VD: Publication Dordrecht: Springer, - p. Abstract Emphasising on classifying and describing specific gettering techniques, this book addresses engineers and material scientists interested in semiconducting materials theory also undergraduate and graduate students in solid-state .   The GADEST conference series provides a forum for interaction between scientists and engineers engaged in the field of semiconductor defect physics, materials science and device technology. The conference is focused on fundamental aspects as well as technological problems associated with defects in electronic materials and devices ranging from.

Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication. A typical example is the intrinsic gettering technique for Czochralski silicon. Defects and Properties of Semiconductors Book. Book Description: Volume is indexed by Thomson Reuters CPCI-S (WoS). This volume is a collection of papers presented at the 10th International Autumn Meeting on "Gettering and Defect Engineering in Semiconductor Technology - GADEST ," which took place from the 21st to the 26th of September at the Seehotel Zeuthen, in the state of. Defects and Impurities in Multilayer Structures on Si: The Role of Mechanical Stresses in Gettering of Defects and Impurities by Intrinsic and Extrinsic Grain Boundaries V.V. Bolotov, M.D. Efremov, V.M. Emeksuzyan and K. Schmalz 13 Precipitation of Iron in Silicon: Gettering to Extended Surface Defect Sites M.D. de Coteau, P.R. Wilshaw and R. Due to the broad spectrum of topics covered, ranging from theoretical analyses to practical engineering solutions, the present book uniquely and complements others in the field. 1. Keynote Address. 2. Silicon Materials. 3. Gettering Techniques. 4. Oxygen in Silicon. 5. Erbium in Silicon. 6. Radiation Effects in Semiconductors. 7. Dislocations.